Toshiba Semiconductor and Storage
MOSFET 2N-CH 30V 4A 6DFN
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 46mOhm @ 2A, 4.5V |
|---|---|
| Basis-Teilenummer | SSM6N57 |
| Konfiguration | 2 N-Channel (Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 4nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 310pF @ 10V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Drain-Source-Spannung | 30V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4A |
| Power - Max | 1W |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 6-WDFN Exposed Pad |
| Hersteller-Gehäuse | 6-µDFN (2x2) |
| Betriebstemperatur | 150°C (TJ) |
|---|