Toshiba Semiconductor and Storage
MOSFET 2N-CH 20V 1.6A UF6
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 119mOhm @ 1A, 4V |
|---|---|
| Basis-Teilenummer | SSM6N39 |
| Konfiguration | 2 N-Channel (Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 4V |
| Input Capacitance (Ciss) (Max) @ Vds | 260pF @ 10V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Drain-Source-Spannung | 20V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
| Power - Max | 500mW |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 6-SMD, Flat Leads |
| Hersteller-Gehäuse | UF6 |
| Betriebstemperatur | 150°C |
|---|