Toshiba Semiconductor and Storage
MOSFET 2N-CH 20V 0.18A ES6
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 3Ohm @ 50mA, 4V |
|---|---|
| Basis-Teilenummer | SSM6N35 |
| Konfiguration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Input Capacitance (Ciss) (Max) @ Vds | 9.5pF @ 3V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Drain-Source-Spannung | 20V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 180mA |
| Power - Max | 150mW |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | SOT-563, SOT-666 |
| Hersteller-Gehäuse | ES6 |
| Betriebstemperatur | 150°C (TJ) |
|---|