Toshiba Semiconductor and Storage
MOSFET N/P-CH 30V/20V 4A 6TSOPF
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V |
|---|---|
| Konfiguration | N and P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 3.2nC @ 4.5V, 6.7nC @4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 310pF @ 15V, 480pF @ 10V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 1mA, 1.2V @ 1mA |
| Drain-Source-Spannung | 30V, 20V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Power - Max | 1.4W (Ta) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 6-SMD, Flat Leads |
| Hersteller-Gehäuse | 6-TSOP-F |
| Grade | Automotive |
|---|---|
| Betriebstemperatur | 150°C |
| Qualification | AEC-Q101 |