Allgemein
| Rds On (Max) @ Id, Vgs | 122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V |
|---|---|
| Basis-Teilenummer | SSM6L40 |
| Konfiguration | N and P-Channel |
| FET Feature | Logic Level Gate, 4V Drive |
| Gate Charge (Qg) (Max) @ Vgs | 5.1nC @ 10V, 2.9nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 180pF @ 15V, 120pF @ 15V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA, 2V @ 1mA |