Allgemein
| Rds On (Max) @ Id, Vgs | 630mOhm @ 200mA, 5V, 1.31Ohm @ 100mA, 4.5V |
|---|---|
| Basis-Teilenummer | SSM6L36 |
| Konfiguration | N and P-Channel |
| FET Feature | Logic Level Gate, 1.5V Drive |
| Gate Charge (Qg) (Max) @ Vgs | 1.23nC @ 4V, 1.2nC @ 4V |
| Input Capacitance (Ciss) (Max) @ Vds | 46pF @ 10V, 43pF @ 10V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |