Toshiba Semiconductor and Storage
MOSFET N/P-CH 20V 0.18A/0.1A US6
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 3Ohm @ 50mA, 4V |
|---|---|
| Basis-Teilenummer | SSM6L35 |
| Konfiguration | N and P-Channel |
| FET Feature | Logic Level Gate, 1.2V Drive |
| Input Capacitance (Ciss) (Max) @ Vds | 9.5pF @ 3V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Drain-Source-Spannung | 20V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 180mA, 100mA |
| Power - Max | 200mW |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Hersteller-Gehäuse | US6 |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|