Toshiba Semiconductor and Storage
MOSFET N/P-CH 30V/20V 0.5A UF6
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 145mOhm @ 500mA, 4.5V, 260mOhm @ 250mA, 4V |
|---|---|
| Basis-Teilenummer | SSM6L12 |
| Konfiguration | N and P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 245pF @ 10V, 218pF @ 10V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.1V @ 100µA |
| Drain-Source-Spannung | 30V, 20V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 500mA (Ta) |
| Power - Max | 500mW |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 6-SMD, Flat Leads |
| Hersteller-Gehäuse | UF6 |
| Betriebstemperatur | 150°C |
|---|