Toshiba Semiconductor and Storage
MOSFET N/P-CH 30V 0.4A/0.2A US6
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 700mOhm @ 200MA, 10V |
|---|---|
| Basis-Teilenummer | SSM6L09 |
| Konfiguration | N and P-Channel |
| FET Feature | Logic Level Gate |
| Input Capacitance (Ciss) (Max) @ Vds | 20pF @ 5V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Not For New Designs |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.8V @ 100µA |
| Drain-Source-Spannung | 30V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 400mA, 200mA |
| Power - Max | 300mW |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Hersteller-Gehäuse | US6 |
| Betriebstemperatur | 150°C (TJ) |
|---|