Toshiba Semiconductor and Storage
N-CH MOSFET, 100 V, 10 A, 0.0258
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 25.8mOhm @ 4A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 8.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1110 pF @ 15 V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 100µA |
| Drain-Source-Spannung | 100 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Max. Verlustleistung | 1.5W (Ta) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|
| Grade | Automotive |
|---|---|
| Betriebstemperatur | 175°C |
| Qualification | AEC-Q101 |