Toshiba Semiconductor and Storage
MOSFET N-CH 20V 3.2A ES6
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 47mOhm @ 2A, 4.5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 10.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 10 V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | U-MOSIII |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Drain-Source-Spannung | 20 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
| Max. Verlustleistung | 500mW (Ta) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | SOT-563, SOT-666 |
| Hersteller-Gehäuse | ES6 |
| Betriebstemperatur | 150°C (TJ) |
|---|