Toshiba Semiconductor and Storage
MOSFET N-CH 30V 1.9A ES6
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 133mOhm @ 1A, 4V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1.9 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 123 pF @ 15 V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Drain-Source-Spannung | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4V |
| Current - Continuous Drain (Id) @ 25°C | 1.9A (Ta) |
| Max. Verlustleistung | 500mW (Ta) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | SOT-563, SOT-666 |
| Hersteller-Gehäuse | ES6 |
| Betriebstemperatur | 150°C |
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