Toshiba Semiconductor and Storage
MOSFET P-CH 30V 1.4A ES6
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 251mOhm @ 650mA, 10V |
|---|---|
| Basis-Teilenummer | SSM6J207 |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 137 pF @ 15 V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | U-MOSII |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Drain-Source-Spannung | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Ta) |
| Max. Verlustleistung | 500mW (Ta) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | SOT-563, SOT-666 |
| Hersteller-Gehäuse | ES6 |
| Betriebstemperatur | 150°C (TJ) |
|---|