Toshiba Semiconductor and Storage
MOSFET N-CH 20V 100MA USV
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 3Ohm @ 10mA, 4V |
|---|---|
| Basis-Teilenummer | SSM5N16 |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 9.3 pF @ 3 V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | π-MOSVI |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Drain-Source-Spannung | 20 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
| Max. Verlustleistung | 200mW (Ta) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | 5-TSSOP, SC-70-5, SOT-353 |
| Hersteller-Gehäuse | 5-SSOP |
| Betriebstemperatur | 150°C(TJ) |
|---|