Toshiba Semiconductor and Storage
MOSFET N-CH 20V 1.5A UFV
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 160mOhm @ 750mA, 4V |
|---|---|
| Basis-Teilenummer | SSM5H08 |
| FET Feature | Schottky Diode (Isolated) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 125 pF @ 10 V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | U-MOSIII |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1.1V @ 100µA |
| Drain-Source-Spannung | 20 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4V |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
| Max. Verlustleistung | 500mW (Ta) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 6-SMD (5 Leads), Flat Lead |
| Hersteller-Gehäuse | UFV |
| Betriebstemperatur | 150°C |
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