Toshiba Semiconductor and Storage
MOSFET N-CH 30V 4A SOT-23F
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 55mOhm @ 4A, 4.5V |
|---|---|
| Basis-Teilenummer | SSM3K324 |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 190 pF @ 30 V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | U-MOSVII-H |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Drain-Source-Spannung | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Max. Verlustleistung | 1W (Ta) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | SOT-23-3 Flat Leads |
| Hersteller-Gehäuse | SOT-23F |
| Betriebstemperatur | 150°C(TJ) |
|---|