Toshiba Semiconductor and Storage
PB-F VESM S-MOS (LF) TRANSISTOR
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 3Ohm @ 10mA, 4V |
|---|---|
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 9.3 pF @ 3 V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Verpackung | Tape & Reel (TR) Cut Tape (CT) |
| Teilestatus | Aktiv |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Vgs(th) (Max) @ Id | 1.1V @ 100µA |
| Drain-Source-Spannung | 20 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
| Max. Verlustleistung | 150mW (Ta) |
| Package / Case | SOT-723 |
|---|---|
| Hersteller-Gehäuse | VESM |
| Betriebstemperatur | 150°C |
|---|