Toshiba Semiconductor and Storage
MOSFET N-CH 30V 2.2A UFM
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 100mOhm @ 500mA, 4.5V |
|---|---|
| Basis-Teilenummer | SSM3K116 |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 245 pF @ 10 V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Verpackung | Tape & Reel (TR) Cut Tape (CT) |
| Teilestatus | Aktiv |
| Serie | U-MOSIII |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1.1V @ 100µA |
| Drain-Source-Spannung | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
| Max. Verlustleistung | 500mW (Ta) |
| Package / Case | 3-SMD, Flat Leads |
|---|---|
| Hersteller-Gehäuse | UFM |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
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