Toshiba Semiconductor and Storage
MOSFET N-CH 30V 400MA USM
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 700mOhm @ 200MA, 10V |
|---|---|
| Basis-Teilenummer | SSM3K09 |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 20 pF @ 5 V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | π-MOSVI |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 1.8V @ 100µA |
| Drain-Source-Spannung | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 3.3V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 400mA (Ta) |
| Max. Verlustleistung | 150mW (Ta) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | SC-70, SOT-323 |
| Hersteller-Gehäuse | USM |
| Betriebstemperatur | 150°C |
|---|