Toshiba Semiconductor and Storage
MOSFET P-CH 20V 800MA VESM
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 390mOhm @ 800mA, 4.5V |
|---|---|
| Basis-Teilenummer | SSM3J56 |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 100 pF @ 10 V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | U-MOSVI |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Drain-Source-Spannung | 20 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 800mA (Ta) |
| Max. Verlustleistung | 150mW (Ta) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | SOT-723 |
| Hersteller-Gehäuse | VESM |
| Betriebstemperatur | 150°C (TJ) |
|---|