Toshiba Semiconductor and Storage
MOSFET P-CH 60V 3.5A SOT-23F
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 134mOhm @ 1A, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 10 V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Verpackung | Tape & Reel (TR) Cut Tape (CT) |
| Teilestatus | Aktiv |
| Serie | U-MOSVI |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | +10V, -20V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Drain-Source-Spannung | 60 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta) |
| Max. Verlustleistung | 2W (Ta) |
| Package / Case | SOT-23-3 Flat Leads |
|---|---|
| Hersteller-Gehäuse | SOT-23F |
| Betriebstemperatur | 150°C |
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