Toshiba Semiconductor and Storage
MOSFET P-CH 20V 2.3A TSM
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 127mOhm @ 1A, 4V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 6.1 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 335 pF @ 10 V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Serie | U-MOSIII |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Drain-Source-Spannung | 20 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) |
| Max. Verlustleistung | 700mW (Ta) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Hersteller-Gehäuse | TSM |
| Betriebstemperatur | 150°C (TJ) |
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