Toshiba Semiconductor and Storage
MOSFET P-CH 30V 100MA CST3
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 12Ohm @ 10mA, 4V |
|---|---|
| Basis-Teilenummer | SSM3J15 |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 9.1 pF @ 3 V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | π-MOSVI |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Drain-Source-Spannung | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4V |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
| Max. Verlustleistung | 100mW (Ta) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | SC-101, SOT-883 |
| Hersteller-Gehäuse | CST3 |
| Betriebstemperatur | 150°C (TJ) |
|---|