Allgemein
| Basis-Teilenummer | RN2425 |
|---|---|
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Active |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 50mA |
Toshiba Semiconductor and Storage
RN2425(TE85L,F)
DatenblattAnalog & Leistungselektronik
TRANS PREBIAS PNP 50V 0.8A SMINI
Technische Spezifikationen
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
Elektrisch
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
|---|---|
| Current - Collector (Ic) (Max) | 800 mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 100mA, 1V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
Mechanisch
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Hersteller-Gehäuse | S-Mini |