Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 50V 0.1A VESM
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | RN1115 |
|---|---|
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Not For New Designs |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
|---|---|
| Current - Collector (Ic) (Max) | 100 mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
| Power - Max | 150 mW |
| Frequency - Transition | 250 MHz |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | SOT-723 |
| Hersteller-Gehäuse | VESM |