Allgemein
| Basis-Teilenummer | MT3S111 |
|---|---|
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Noise Figure (dB Typ @ f) | 1.25dB @ 1GHz |
| Product Status | Obsolete |
| Transistor Type | NPN |

Toshiba Semiconductor and Storage
RF TRANS NPN 6V 8GHZ PW-MINI
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | MT3S111 |
|---|---|
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Noise Figure (dB Typ @ f) | 1.25dB @ 1GHz |
| Product Status | Obsolete |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 6V |
|---|---|
| Current - Collector (Ic) (Max) | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 30mA, 5V |
| Power - Max | 1W |
| Frequency - Transition | 8GHz |
| Gain | 10.5dB |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | TO-243AA |
| Hersteller-Gehäuse | PW-MINI |
| Betriebstemperatur | 150°C (TJ) |
|---|