Allgemein
| Basis-Teilenummer | HN1B01 |
|---|---|
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Active |
| Transistor Type | NPN, PNP |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA |
Toshiba Semiconductor and Storage
HN1B01FU-Y,LXHF
DatenblattAnalog & Leistungselektronik
AUTO AEC-Q PNP + NPN TR VCEO:-50
Technische Spezifikationen
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
Elektrisch
| Voltage - Collector Emitter Breakdown (Max) | 50V |
|---|---|
| Current - Collector (Ic) (Max) | 150mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA, 6V |
| Power - Max | 200mW |
| Frequency - Transition | 120MHz, 150MHz |
Mechanisch
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Hersteller-Gehäuse | US6 |
Umwelt
| Grade | Automotive |
|---|---|
| Qualification | AEC-Q101 |