Toshiba Semiconductor and Storage
DISCRETE IGBT TRANSISTOR TO-3PN(
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | GT40QR21 |
|---|---|
| Eingangstyp | Standard |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Through Hole |
| Product Status | Active |
| Reverse Recovery Time (trr) | 600 ns |
| Switching Energy | -, 290µJ (off) |
| Test Condition | 280V, 40A, 10Ohm, 20V |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 40A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
|---|---|
| Current - Collector (Ic) (Max) | 40 A |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 230 W |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-3P-3, SC-65-3 |
| Hersteller-Gehäuse | TO-3P(N) |
| Betriebstemperatur | 175°C(TJ) |
|---|