Toshiba Semiconductor and Storage
IGBT TRANS 600V 30A TO3PN
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | GT30J341 |
|---|---|
| Eingangstyp | Standard |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Through Hole |
| Product Status | Active |
| Reverse Recovery Time (trr) | 50 ns |
| Switching Energy | 800µJ (on), 600µJ (off) |
| Td (on/off) @ 25°C | 80ns/280ns |
| Test Condition | 300V, 30A, 24Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 30A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
|---|---|
| Current - Collector (Ic) (Max) | 59 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 230 W |
| Gehäuse | Tray |
|---|---|
| Package / Case | TO-3P-3, SC-65-3 |
| Hersteller-Gehäuse | TO-3P(N) |
| Betriebstemperatur | 175°C(TJ) |
|---|