Toshiba Semiconductor and Storage
IGBT 600V 30A 170W TO3PN
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | GT30J121 |
|---|---|
| Eingangstyp | Standard |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Through Hole |
| Product Status | Active |
| Switching Energy | 1mJ (on), 800µJ (off) |
| Td (on/off) @ 25°C | 90ns/300ns |
| Test Condition | 300V, 30A, 24Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.45V @ 15V, 30A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
|---|---|
| Current - Collector (Ic) (Max) | 30 A |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 170 W |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-3P-3, SC-65-3 |
| Hersteller-Gehäuse | TO-3P(N) |