Toshiba Semiconductor and Storage
PB-F DISCRETE IGBT TRANSISTOR TO
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Eingangstyp | Standard |
|---|---|
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Through Hole |
| Product Status | Active |
| Reverse Recovery Time (trr) | 80 ns |
| Switching Energy | 300µJ (on), 300µJ (off) |
| Td (on/off) @ 25°C | 60ns/170ns |
| Test Condition | 300V, 15A, 33Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 15A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
|---|---|
| Current - Collector (Ic) (Max) | 15 A |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 30 W |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-220-3 Full Pack |
| Hersteller-Gehäuse | TO-220SIS |
| Betriebstemperatur | 150°C(TJ) |
|---|