Allgemein
| Basis-Teilenummer | CRS10I40 |
|---|---|
| Capacitance @ Vr, F | 35pF @ 10V, 1MHz |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | Standard |

Toshiba Semiconductor and Storage
DIODE GEN PURP 40V 1A S-FLAT
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | CRS10I40 |
|---|---|
| Capacitance @ Vr, F | 35pF @ 10V, 1MHz |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | Standard |
| Voltage - DC Reverse (Vr) (Max) | 40 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 490 mV @ 700 mA |
| Current - Average Rectified (Io) | 1A |
| Current - Reverse Leakage @ Vr | 60 µA @ 40 V |
| Geschwindigkeit | Standard Recovery >500ns, > 200mA (Io) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | SOD-123F |
| Hersteller-Gehäuse | S-FLAT (1.6x3.5) |
| Operating Temperature - Junction | 150°C (Max) |
|---|