Allgemein
| Rds On (Max) @ Id, Vgs | 12.5mOhm @ 18A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 91 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5120 pF @ 10 V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Serie | U-MOSIII |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |