Toshiba Semiconductor and Storage
MOSFET N-CH 30V 200MA SC59-3
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 2Ohm @ 50MA, 2.5V |
|---|---|
| Basis-Teilenummer | 2SK2009 |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 70 pF @ 3 V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 1.5V @ 100µA |
| Drain-Source-Spannung | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
| Max. Verlustleistung | 200mW (Ta) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Hersteller-Gehäuse | SC-59-3 |
| Betriebstemperatur | 150°C (TJ) |
|---|