Toshiba Semiconductor and Storage
MOSFET P-CH 60V 200MA SC59
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 2Ohm @ 50mA, 10V |
|---|---|
| Basis-Teilenummer | 2SJ168 |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 85 pF @ 10 V |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Drain-Source-Spannung | 60 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
| Max. Verlustleistung | 200mW (Ta) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Hersteller-Gehäuse | SC-59 |
| Betriebstemperatur | 150°C (TJ) |
|---|