Allgemein
| Basis-Teilenummer | 1SS250 |
|---|---|
| Capacitance @ Vr, F | 3pF @ 0V, 1MHz |
| Hersteller | Toshiba Semiconductor and Storage |
| Montageart | Surface Mount |
| Product Status | Not For New Designs |
| Reverse Recovery Time (trr) | 60 ns |
| Technologie | Standard |
Toshiba Semiconductor and Storage
1SS250(TE85L,F)
Analog & Leistungselektronik
DIODE GEN PURP 200V 100MA SC59
Technische Spezifikationen
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
Elektrisch
| Voltage - DC Reverse (Vr) (Max) | 200 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 100 mA |
| Current - Average Rectified (Io) | 100mA |
| Current - Reverse Leakage @ Vr | 1 µA @ 200 V |
| Geschwindigkeit | Small Signal =< 200mA (Io), Any Speed |
Mechanisch
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Hersteller-Gehäuse | SC-59 |
Umwelt
| Operating Temperature - Junction | 125°C (Max) |
|---|