Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 180mOhm @ 1.5A, 10V |
|---|---|
| Basis-Teilenummer | TPS1100 |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 5.45 nC @ 10 V |
| Hersteller | Texas Instruments |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | +2V, -15V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Drain-Source-Spannung | 15 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
| Max. Verlustleistung | 791mW (Ta) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Hersteller-Gehäuse | 8-SOIC |
| Betriebstemperatur | -40°C~150°C(TJ) |
|---|