Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 40mOhm @ 2A, 4.5V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 5.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 10 V |
| Hersteller | Texas Instruments |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Serie | NexFET™ |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | -6V |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Drain-Source-Spannung | 20 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Max. Verlustleistung | 1.5W (Ta) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | 9-UFBGA, DSBGA |
| Hersteller-Gehäuse | 9-DSBGA |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|