Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 59mOhm @ 5A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 5.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 454 pF @ 50 V |
| Hersteller | Texas Instruments |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | NexFET™ |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.8V @ 250µA |
| Drain-Source-Spannung | 100 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 13.1A (Tc) |
| Max. Verlustleistung | 2.5W (Ta), 20.2W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | 6-WDFN Exposed Pad |
| Hersteller-Gehäuse | 6-WSON (2x2) |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|