Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 100A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 156 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12200 pF @ 40 V |
| Hersteller | Texas Instruments |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | NexFET™ |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.2V @ 250µA |
| Drain-Source-Spannung | 80 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 200A (Ta) |
| Max. Verlustleistung | 375W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
| Hersteller-Gehäuse | DDPAK/TO-263-3 |
| Betriebstemperatur | -55°C~175°C(TJ) |
|---|