Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 100A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 153 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11400 pF @ 20 V |
| Hersteller | Texas Instruments |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | NexFET™ |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Drain-Source-Spannung | 40 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 274A (Tc) |
| Max. Verlustleistung | 250W (Ta) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Hersteller-Gehäuse | TO-263 (DDPAK-3) |
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
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