Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 109mOhm @ 500mA, 8A |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1.35 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 195 pF @ 15 V |
| Hersteller | Texas Instruments |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | NexFET™ |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | 12V |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Drain-Source-Spannung | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Ta) |
| Max. Verlustleistung | 500mW (Ta) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | 3-XFDFN |
| Hersteller-Gehäuse | 3-PICOSTAR |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|