Taiwan Semiconductor Corporation
MOSFET 2N-CH 20V 6A 8SOP
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 30mOhm @ 6A, 10V |
|---|---|
| Basis-Teilenummer | TSM9926 |
| Konfiguration | 2 N-Channel (Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 7.1nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 562pF @ 8V |
| Hersteller | Taiwan Semiconductor Corporation |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 600mV @ 250µA |
| Drain-Source-Spannung | 20V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Power - Max | 1.6W |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Hersteller-Gehäuse | 8-SOP |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|