Taiwan Semiconductor Corporation
20V, -6.4A, SINGLE P-CHANNEL PO
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 40mOhm @ 6.4A, 4.5V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1020 pF @ 10 V |
| Hersteller | Taiwan Semiconductor Corporation |
| Montageart | Surface Mount |
| Verpackung | Tape & Reel (TR) |
| Teilestatus | Aktiv |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Drain-Source-Spannung | 20 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 6.4A (Tc) |
| Max. Verlustleistung | 2.5W (Ta) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
|---|---|
| Hersteller-Gehäuse | 8-SOP |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|