Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 60V 6A SOT223
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 90mOhm @ 3A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 525 pF @ 30 V |
| Hersteller | Taiwan Semiconductor Corporation |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Drain-Source-Spannung | 60 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Max. Verlustleistung | 7.8W (Tc) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|