Taiwan Semiconductor Corporation
650V, 7A, SINGLE N-CHANNEL POWER
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 1.35Ohm @ 2A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1169 pF @ 50 V |
| Hersteller | Taiwan Semiconductor Corporation |
| Montageart | Through Hole |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Drain-Source-Spannung | 650 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Max. Verlustleistung | 44.6W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-220-3 Full Pack |
| Hersteller-Gehäuse | ITO-220S |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|