Taiwan Semiconductor Corporation
700V, 8A, SINGLE N-CHANNEL POWER
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 600mOhm @ 2.4A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 12.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 743 pF @ 100 V |
| Hersteller | Taiwan Semiconductor Corporation |
| Montageart | Through Hole |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain-Source-Spannung | 700 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Max. Verlustleistung | 83W (Tc) |
| Gehäuse | Tube |
|---|---|
| Hersteller-Gehäuse | TO-262S (I2PAK SL) |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|