Taiwan Semiconductor Corporation
MOSFET 2N-CH 20V 6A 8TSSOP
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 30mOhm @ 6A, 4.5V |
|---|---|
| Basis-Teilenummer | TSM6866 |
| Konfiguration | 2 N-Channel |
| FET Feature | Standard |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 565pF @ 8V |
| Hersteller | Taiwan Semiconductor Corporation |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 0.6V @ 250µA |
| Drain-Source-Spannung | 20V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Power - Max | 1.6W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
| Hersteller-Gehäuse | 8-TSSOP |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|