Taiwan Semiconductor Corporation
MOSFET 2P-CH 60V 12A 8DFN
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 68mOhm @ 6A, 10V |
|---|---|
| Basis-Teilenummer | TSM680 |
| Konfiguration | 2 P-Channel (Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 16.4nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 870pF @ 30V |
| Hersteller | Taiwan Semiconductor Corporation |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Drain-Source-Spannung | 60V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Power - Max | 3.5W |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 8-PowerTDFN |
| Hersteller-Gehäuse | 8-PDFN (5x6) |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|