Taiwan Semiconductor Corporation
MOSFET P-CH 60V 18A ITO220
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 68mOhm @ 6A, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 16.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 30 V |
| Hersteller | Taiwan Semiconductor Corporation |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Drain-Source-Spannung | 60 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Max. Verlustleistung | 17W (Tc) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Hersteller-Gehäuse | ITO-220 |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|